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| inchange semiconductor isc product specification isc silicon npn power transistor 2SD1495 description high breakdown voltage- : v cbo = 1500v (min) high switching speed applications designed for tv horizontal defle ction output applications. absolute maximum ratings(t a =25 ) symbol parameter value unit v cbo collector-base voltage 1500 v v ceo collector-emitter voltage 600 v v ebo emitter-base voltage 6 v i c collector current-continuous 4 a p c collector power dissipation @ t c = 25 50 w t j junction temperature 150 t stg storage temperature range -45~150 isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon npn power transistor 2SD1495 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c = 10ma; r be = 600 v v (br)ebo emitter-base breakdown voltage i e = 10ma; i c = 0 6 v v ce (sat) collector-emitter saturation voltage i c = 3.5a; i b = 1a 5.0 v v be (sat) base-emitter saturation voltage i c = 3.5a; i b = 1a 1.5 v i cbo collector cutoff current v cb = 600v; i e = 0 10 a h fe dc current gain i c = 1a; v ce = 5v 6 isc website www.iscsemi.cn 2 |
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